Prestress-loading effect on the current–voltage characteristics of a piezoelectric p–n junction together with the corresponding mechanical tuning laws

• Wanli Yang,
• Shuaiqi Fan,
• Yuxing Liang and
• Yuantai Hu

Beilstein J. Nanotechnol. 2019, 10, 1833–1843, doi:10.3762/bjnano.10.178

• ; piezoelectric property; p–n junction; Introduction With the new area of piezotronics proposed by Wang [1][2], researches on the fundamental characteristics of piezoelectric semiconductor structures and devices have been increasing. It should be emphasized that the most commonly utilized semiconductors at